PHYSICAL PROPERTIES OF AMORPHOUS CVD SILICON-Reference-Cited by-同舟云学术

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PHYSICAL PROPERTIES OF AMORPHOUS CVD SILICON

Published:1981-10 Issue:C4 Volume:42 Page:C4-705-C4-714
ISSN:0449-1947
Container-title:Le Journal de Physique Colloques
language:
Short-container-title:J. Phys. Colloques

Author:

Hirose M.

Publisher

EDP Sciences

Subject

General Engineering

Link

http://jphyscol.journaldephysique.org/10.1051/jphyscol:19814156/pdf

Cited by 29 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Methods of deposition of hydrogenated amorphous silicon for device applications;Handbook of Thin Films;2002

2. Methods of Deposition of Hydrogenated Amorphous Silicon for Device Applications;Thin Films and Nanostructures;2002

3. Monohydride clustering in the amorphous silicon matrix;Journal of Non-Crystalline Solids;1999-04

4. Optoelectronic Properties of Amorphous Silicon Using the Plasma-Enhanced Chemical Vapor Deposition (PECVD) Technique;Plasma Deposition of Amorphous Silicon-Based Materials;1995

5. Hot-Wall Chemical-Vapor-Deposition of Amorphous-Silicon and Its Application to Thin-Film Transistors;Japanese Journal of Applied Physics;1991-12-30

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