HVEM AND HREM OF INTERFACES IN ALUMINIUM NITRIDE CERAMICS
Author:
Publisher
EDP Sciences
Subject
General Engineering
Link
http://jphyscol.journaldephysique.org/10.1051/jphyscol:1988518/pdf
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Impact of nucleation conditions on the structural and optical properties ofM-plane GaN(11̄00) grown on γ-LiAlO2;Journal of Applied Physics;2002-11-15
2. The structures of inversion domain boundaries in AlN ceramics;Philosophical Magazine A;1997-04
3. Defect structure of metal‐organic chemical vapor deposition‐grown epitaxial (0001) GaN/Al2O3;Journal of Applied Physics;1996-09-15
4. Oxygen incorporation in aluminum nitride via extended defects: Part II. Structure of curved inversion domain boundaries and defect formation;Journal of Materials Research;1995-05
5. Oxygen incorporation in aluminum nitride via extended defects: Part I. Refinement of the structural model for the planar inversion domain boundary;Journal of Materials Research;1995-05
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