Nucleation of partial dislocations from a surface-step in semiconductors: a first approach of the mobility effect-Reference-Cited by-同舟云学术

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Nucleation of partial dislocations from a surface-step in semiconductors: a first approach of the mobility effect

Published:1998-05 Issue:2 Volume:2 Page:99-105
ISSN:1286-0042
Container-title:The European Physical Journal Applied Physics
language:
Short-container-title:Eur. Phys. J. AP

Author:

Brochard S.,Rabier J.,Grilhé J.

Publisher

EDP Sciences

Subject

Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://epjap.epj.org/10.1051/epjap:1998171/pdf

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