Solid source molecular beam epitaxial growth of In0.48Ga0.52P on GaAs substrates using a valved phosphorus cracker cell
Author:
Publisher
EDP Sciences
Subject
Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials
Link
http://www.epjap.org/10.1051/epjap:1999205/pdf
Reference25 articles.
1. High-speed InGaP/GaAs heterojunction bipolar transistors with buried SiO2 using WSi as the base electrode
2. The importance of lattice mismatch in the growth of GaxIn1−xP epitaxial crystals
3. Semi-insulating In0.49Ga0.51P grown at reduced substrate temperature by low-pressure metalorganic chemical vapor deposition
4. Highly carbon‐dopedp‐type Ga0.5In0.5As and Ga0.5In0.5P by carbon tetrachloride in gas‐source molecular beam epitaxy
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