Electronic properties of hydrogenated amorphous silicon-germanium alloys
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Publisher
EDP Sciences
Link
http://jphys.journaldephysique.org/10.1051/jphys:01983004406071300/pdf
Reference29 articles.
1. Substitutional doping of amorphous silicon
2. Characterized of glow-discharge deposited a-Si:H
3. Preferential Attachment of H in Amorphous Hydrogenated Binary Semiconductors and Consequent Inferior Reduction of Pseudogap State Density
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3. The effects of native and light induced defects on optoelectronic properties of hydrogenated amorphous silicon–germanium (a-SiGe:H) alloy thin films;Journal of Materials Science: Materials in Electronics;2009-04-18
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