Preferential Attachment of H in Amorphous Hydrogenated Binary Semiconductors and Consequent Inferior Reduction of Pseudogap State Density
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.46.1016/fulltext
Reference9 articles.
1. Electronic properties of substitutionally doped amorphous Si and Ge
2. Vibrational properties of hydrogenated amorphous GaAs
3. The hydrogen content of a-Ge:H and a-Si:H as determined by ir spectroscopy, gas evolution and nuclear reaction techniques
4. Effects of partial evolution of H from a-Si:H on the infrared vibrational spectra and the photoluminescence
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