An Overview of Buried Oxides on Silicon: New Processes and Radiation Effects
Author:
Publisher
EDP Sciences
Subject
General Physics and Astronomy,General Engineering
Link
http://jp3.journaldephysique.org/10.1051/jp3:1996205/pdf
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Design and Analysis of IGZO Based Junctionless Thin Film Transistor Using SOI Technology;Silicon;2020-11-05
2. Effect of implantation temperature on exfoliation of H2+-implanted Si;Vacuum;2014-11
3. Effects of annealing temperature on buried oxide precipitates in He and O co-implanted Si;Vacuum;2013-07
4. Precipitates and defects in silicon co-implanted with helium and oxygen;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2011-04
5. Low Temperature Ultrathin Dielectrics on Silicon and Silicon Carbide Surfaces: From the Atomic Scale to Interface Formation;Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices;1998
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