On the Improvement of SIMS Technique by the Use of MCs+Molecular Ions
Author:
Publisher
EDP Sciences
Subject
Instrumentation
Link
http://mmm.edpsciences.org/10.1051/mmm:1995144/pdf
Reference11 articles.
1. A new secondary ion mass spectrometry technique for III‐V semiconductor compounds using the molecular ions CsM+
2. SIMS and X-ray diffraction characterization of carbon-doped GaAs, AlxGa1 −xAs films grown by MBE
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