A multi-valley model for hot free-electron nonlinearities at 10.6μm in highly doped n-GaAs
Author:
Publisher
EDP Sciences
Subject
Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials
Link
http://www.epjap.org/10.1051/epjap:2000185/pdf
Reference27 articles.
1. Optical Nonlinearities due to Mobile Carriers in Semiconductors
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