Influence of electron scattering on phonon-plasmon coupled modes dispersion and free-electron absorption in n-doped GaN semiconductors at mid-IR wavelengths-Reference-Cited by-同舟云学术

Influence of electron scattering on phonon-plasmon coupled modes dispersion and free-electron absorption in n-doped GaN semiconductors at mid-IR wavelengths

Published:2014-01-07 Issue:4 Volume:251 Page:882-891
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Shkerdin Gennady¹,Rabbaa Sulaiman²,Stiens Johan³,Vounckx Roger³

Affiliation:

1. The Kotel'nikov Institute of Radioengineering and Electronics of Russian Academy of Sciences; Vvedensky square 1 141120 Fryazino Moscow Region Russia

2. Department of Physics; Arab American University-Jenin; PO Box 240 Jenin Palestinian Territories

3. Laboratory of Micro- and PhotonElectronics; Dept. of Electronics and Informatics; Vrije Universiteit Brussel; Pleinlaan 2 1050 Brussels Belgium

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference32 articles.

1. Composition dependence of the infrared dielectric functions in Si-doped hexagonalAlxGa1−xNfilms onc-plane sapphire substrates

2. High-power GaN LED chip with low thermal resistance

3. FTIR Measurements of Thickness and Free Carrier Concentration in GaN‐Based Films

4. Free-carrier and phonon properties ofn- andp-type hexagonal GaN films measured by infrared ellipsometry

5. Infrared to vacuum-ultraviolet ellipsometry and optical Hall-effect study of free-charge carrier parameters in Mg-doped InN

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