Influence of electron scattering on phonon-plasmon coupled modes dispersion and free-electron absorption in n-doped GaN semiconductors at mid-IR wavelengths

Author:

Shkerdin Gennady1,Rabbaa Sulaiman2,Stiens Johan3,Vounckx Roger3

Affiliation:

1. The Kotel'nikov Institute of Radioengineering and Electronics of Russian Academy of Sciences; Vvedensky square 1 141120 Fryazino Moscow Region Russia

2. Department of Physics; Arab American University-Jenin; PO Box 240 Jenin Palestinian Territories

3. Laboratory of Micro- and PhotonElectronics; Dept. of Electronics and Informatics; Vrije Universiteit Brussel; Pleinlaan 2 1050 Brussels Belgium

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Comparison between optical and electrophysical data on hole concentration in zinc doped p-GaAs;Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering;2023-08-17

2. Comparison between optical and electrical data on hole concentration in zinc-doped p-GaAs;Modern Electronic Materials;2023-07-05

3. Comparison between optical and electrical data on hole concentration in zinc-doped p-GaAs;Modern Electronic Materials;2023-07-05

4. Comparison between optical and electrophysical data on free electron concentration in n-InAs samples;Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering;2021-11-23

5. Comparison between results of optical and electrical measurements of free electron concentration in n-InAs specimens;Modern Electronic Materials;2021-09-30

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