FTIR Measurements of Thickness and Free Carrier Concentration in GaN‐Based Films
Author:
Affiliation:
1. MKS Instruments, On‐Line Products, 87 Church St, East Hartford, CT 06108, USA
Publisher
Wiley
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200390084
Reference9 articles.
1. Infrared Ellipsometry - a Novel Tool for Characterization of Group-III Nitride Heterostructures for Optoelectronic Device Applications
2. Optical phonons and free-carrier effects in MOVPE grown AlxGa1−xN measured by Infrared Ellipsometry
3. Free-carrier and phonon properties ofn- andp-type hexagonal GaN films measured by infrared ellipsometry
4. C.F.BohrenandD.R.Huffman Absorption and Scattering of Light by Small Particles Wiley Interscience New York 1983 (p. 231).
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