The role of a top oxide layer in cavities formed by MeV He implantation into Si
Author:
Publisher
EDP Sciences
Subject
Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials
Link
http://epjap.epj.org/10.1051/epjap:2003038/pdf
Reference16 articles.
1. Helium desorption/permeation from bubbles in silicon: A novel method of void production
2. Cavities and dislocations induced in silicon by MeV He implantation
3. Formation of cavities in GaAs and InGaAs
4. Gettering of copper to hydrogen‐induced cavities in silicon
5. Gettering of metals by He induced voids in silicon
Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Lattice disorder and N elemental segregation in ion implanted GaN epilayer;Applied Surface Science;2020-01
2. Transmission electron microscopy and high-resolution electron microscopy studies of structural defects induced in Si single crystals implanted by helium ions at 600 °C;Applied Surface Science;2018-10
3. Effects of the surface oxide layer on platelet growth in H2+-implanted Si;Vacuum;2014-04
4. Effects of surface oxide layer on nanocavity formation and silver gettering in hydrogen ion implanted silicon;Journal of Applied Physics;2013-07-14
5. Sorption of Eu(III) on GMZ bentonite in the absence/presence of humic acid studied by batch and XAFS techniques;Science China Chemistry;2010-06
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3