Full characterization at 904 nm of large area Si p-n junction photodetectors produced by LID technique-Reference-Cited by-同舟云学术

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Full characterization at 904 nm of large area Si p-n junction photodetectors produced by LID technique

Published:2007-01-31 Issue:3 Volume:38 Page:197-201
ISSN:1286-0042
Container-title:The European Physical Journal Applied Physics
language:
Short-container-title:Eur. Phys. J. Appl. Phys.

Author:

Ismail R. A.,Abdulrazaq O. A.,Hadi A. A.,Hamadi O. A.

Publisher

EDP Sciences

Subject

Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://epjap.epj.org/10.1051/epjap:2007028/pdf

Reference18 articles.

1. Excimer laser crystallization and doping of silicon films on plastic substrates

2. Y. Takamura, S. Jang, P.B. Griffin, J.D. Plummer, Mater. Symp. Proc.669, J-7-3 (2001)

3. Effect of low-temperature preannealing on laser-annealed p+/n ultrashallow junctions

4. Improved Characteristics ofp+-nJunctions formed by Excimer Laser Annealing with Low Temperature Pre-Annealing

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Production of nanopowders from physical vapor deposited films on nonmetallic substrates by conjunctional freezing-assisted ultrasonic extraction method;Proceedings of the Institution of Mechanical Engineers, Part N: Journal of Nanomaterials, Nanoengineering and Nanosystems;2018-11-04

2. DLTS Studies of Al Diffused n-Si;Key Engineering Materials;2010-06

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