Effect of low-temperature preannealing on laser-annealed p+/n ultrashallow junctions
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1463702
Reference4 articles.
1. Boron-enhanced diffusion of boron from ultralow-energy ion implantation
2. Characterization of sub-30 nm p[sup +]/n Junction Formed by Plasma Ion Implantation
3. Annealing of ultrashallow p+/n junction by 248 nm excimer laser and rapid thermal processing with different preamorphization depths
4. Improved Characteristics ofp+-nJunctions formed by Excimer Laser Annealing with Low Temperature Pre-Annealing
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1. Effect of number of laser pulses on p + /n silicon ultra-shallow junction formation during non-melt ultra-violet laser thermal annealing;Materials Science in Semiconductor Processing;2017-03
2. Formation of Ultra Shallow p+/n Junction in Silicon Using a Combination of Low-Temperature Solid Phase Epitaxy and Non-Melt Double-Pulsed Green Laser Annealing;Japanese Journal of Applied Physics;2013-02-01
3. Ultra-shallow Junction Formation Using Plasma Doping and ExcimerLaser Annealing for Nano-technology CMOS Applications;Journal of the Korean Physical Society;2009-09-15
4. Ultra-Shallow Junction Formation by Plasma doping and Excimer Laser Annealing;ECS Transactions;2009-05-15
5. Selective processing of semiconductor nanowires by polarized visible radiation;Applied Physics A;2007-11-08
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