Strain mapping in deep sub-micron Si devices by convergent beam electron diffraction in the STEM-Reference-Cited by-同舟云学术

Strain mapping in deep sub-micron Si devices by convergent beam electron diffraction in the STEM

Published:2004-07 Issue:1-3 Volume:27 Page:49-54
ISSN:1286-0042
Container-title:The European Physical Journal Applied Physics
language:
Short-container-title:Eur. Phys. J. Appl. Phys.

Author:

Armigliato A.,Balboni R.,Frabboni S.

Publisher

EDP Sciences

Subject

Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://epjap.epj.org/10.1051/epjap:2004132/pdf

Reference15 articles.

1. Influence of process-induced stress on device characteristics and its impact on scaled device performance

2. M. Servidori, F. Cembali, S. Milita, inX-ray and Neutron Dynamical Diffraction Theory and Applications, edited by A. Authier, S. Lagomarsino, B. K. Tanner, NATO ASI Series B: Physics, Vol. 357 (Plenum Press, New York and London, 1996)

3. High precision structural measurements on thin epitaxial layers by means of ion-channeling

4. Effect of static uniaxial stress on the Raman spectrum of silicon

5. STREAM Contract No. IST-1999-10341 (http://stream.bo.cnr.it)

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1. Improved TEM Sample Preparation by Low Energy FIB for Strain Analysis by Convergent Beam Electron Diffraction;ECS Transactions;2009-09-25

2. Strain field reconstruction in shallow trench isolation structures by CBED and LACBED;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2006-12

3. Direct strain measurement in a 65nm node strained silicon transistor by convergent-beam electron diffraction;Applied Physics Letters;2006-10-16