Thermoelectric properties of Czochralski-grown silicon at high pressure up to 16 GPa
Author:
Publisher
EDP Sciences
Subject
Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials
Link
http://epjap.epj.org/10.1051/epjap:2004131/pdf
Reference31 articles.
1. DLTS study of oxygen precipitates in silicon annealed at high pressure
2. Double thermal donors in Czochralski-grown silicon heat-treated under atmospheric and high hydrostatic pressures
3. G. Wiech, E. Zöpf, inBand Structure Spectroscopy of Metals and Alloys, edited by D. J. Fabian, L. M. Watson, (Academic Press, London, 1973)
4. Pressure induced phase transitions in silicon, germanium and some III–V compounds
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1. High-Pressure Treatment up to 25~GPa of Czochralski Grown Si Samples Containing Different Admixtures and Defects;Acta Physica Polonica A;2013-08
2. Thermoelectric Power of Different Phases and States of Silicon at High Pressure;Journal of Electronic Materials;2013-05-07
3. The effect of thermal treatments on the magnetic susceptibility of Czochralski-grown n-Si monocrystals;physica status solidi (a);2008-02
4. Variations of high-pressure thermoelectric and mechanical properties of Si single crystals under doping with N and P–T pre-treatment;Materials Science and Engineering: A;2007-07
5. Effect of hydrogen implantation on semiconductor–metal transition and high-pressure thermopower in Si;Materials Science and Engineering: A;2007-07
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