High-Pressure Treatment up to 25~GPa of Czochralski Grown Si Samples Containing Different Admixtures and Defects-Reference-Cited by-同舟云学术

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High-Pressure Treatment up to 25~GPa of Czochralski Grown Si Samples Containing Different Admixtures and Defects

Published:2013-08 Issue:2 Volume:124 Page:244-249
ISSN:0587-4246
Container-title:Acta Physica Polonica A
language:en
Short-container-title:Acta Phys. Pol. A

Author:

Shchennikov V.V.¹,Shchennikov Vs.V.²,Korobeynikov I.V.¹,Morozova N.V.¹

Affiliation:

1. Institute of Metal Physics of Russian Academy of Sciences, Urals Division 18 S. Kovalevskaya Str.,Yekaterinburg 620990, Russia

2. Institute of Engineering Sciences of Russian Academy of Sciences, Urals Division 34 Komsomolskaya Str., Yekaterinburg 620219, Russia

Publisher

Institute of Physics, Polish Academy of Sciences

Subject

General Physics and Astronomy

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Semiconductor-metal phase transition in LaBi under high pressure;Physics of the Solid State;2015-08

2. Thermoelectric properties of TmTe under pressure up to 20 GPa;Physics of the Solid State;2014-05

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