Modelling, analysis, and experimental study of SiC JFET body diode
Author:
Publisher
EDP Sciences
Subject
Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials
Link
http://epjap.epj.org/10.1051/epjap/2010100172/pdf
Reference24 articles.
1. Silicon carbide and its use as a radiation detector material
2. Power Conversion With SiC Devices at Extremely High Ambient Temperatures
3. Application of a time-resolved four-wave mixing technique for the determination of thermal properties of 4H–SiC crystals
4. Maximum Junction Temperatures of SiC Power Devices
5. Silicon Carbide Power Field-Effect Transistors
Cited by 1 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Design and Implementation of Integrated Common Mode Capacitors for SiC-JFET Inverters;IEEE Transactions on Power Electronics;2014-07
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