Application of a time-resolved four-wave mixing technique for the determination of thermal properties of 4H–SiC crystals
Author:
Publisher
IOP Publishing
Subject
Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0022-3727/42/i=5/a=055413/pdf
Reference24 articles.
1. Study of the thermo-optic effect in hydrogenated amorphous silicon and hydrogenated amorphous silicon carbide between 300 and 500 K at 1.55 μm
2. 6-H single-crystal silicon carbide thermo-optic coefficient measurements for ultrahigh temperatures up to 1273 K in the telecommunications infrared band
3. Thermal lens temperature scanning for quantitative measurements in transparent materials (invited)
4. Z-scan measurement of optical nonlinearity in solid-state dye doped media
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2. Bandgap, Mobility, Dielectric Constant, and Baliga’s Figure of Merit of 4H-SiC, GaN, and β-Ga2O3 from 300 to 620 K;ACS Applied Electronic Materials;2022-08-04
3. Temperature dependence of the thermo-optic coefficient in 4H-SiC and GaN slabs at the wavelength of 1550 nm;Scientific Reports;2022-03-21
4. Thermal evolution of silicon carbide electronic bands;Physical Review Materials;2020-01-02
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