The transport mechanism of gate leakage current in AlGaN/GaN high electron mobility transistors-Reference-Cited by-同舟云学术

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The transport mechanism of gate leakage current in AlGaN/GaN high electron mobility transistors

Published:2011-08-18 Issue:3 Volume:55 Page:30104
ISSN:1286-0042
Container-title:The European Physical Journal Applied Physics
language:
Short-container-title:Eur. Phys. J. Appl. Phys.

Author:

Lin D.F.,Wang X.L.,Xiao H.L.,Wang C.M.,Jiang L.J.,Feng C.,Chen H.,Hou Q.F.,Deng Q.W.,Bi Y.,Kang H.

Publisher

EDP Sciences

Subject

Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://www.epjap.org/10.1051/epjap/2011110209/pdf

Reference16 articles.

1. Picosecond optical pulse generation from self-pulsating bisectional GaN-based blue-violet laser diodes

2. An internally-matched GaN HEMTs device with 45.2W at 8GHz for X-band application

3. GaN-based light-emitting diode with textured indium tin oxide transparent layer coated with Al2O3 powder

4. Output power enhancement of GaN light emitting diodes with p-type ZnO hole injection layer

5. SiO2-passivated lateral-geometry GaN transparent Schottky-barrier detectors

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Gate Leakage and Breakdown Characteristics of AlGaN/GaN High-Electron-Mobility Transistors with Fe Delta-Doped Buffer;Nanoscience and Nanotechnology Letters;2018-02-01

2. High-Voltage AlGaN/GaN-Based Lateral Schottky Barrier Diodes;Chinese Physics Letters;2014-06

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