High-Voltage AlGaN/GaN-Based Lateral Schottky Barrier Diodes-Reference-Cited by-同舟云学术

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High-Voltage AlGaN/GaN-Based Lateral Schottky Barrier Diodes

Published:2014-06 Issue:6 Volume:31 Page:068502
ISSN:0256-307X
Container-title:Chinese Physics Letters
language:
Short-container-title:Chinese Phys. Lett.

Author:

Kang He,Wang Quan,Xiao Hong-Ling,Wang Cui-Mei,Jiang Li-Juan,Feng Chun,Chen Hong,Yin Hai-Bo,Wang Xiao-Liang,Wang Zhan-Guo,Hou Xun

Publisher

IOP Publishing

Subject

General Physics and Astronomy

Link

https://iopscience.iop.org/article/10.1088/0256-307X/31/6/068502/pdf

Reference15 articles.

1. Theoretical comparison of SiC PiN and Schottky diodes based on power dissipation considerations

2. Megawatt solid-state electronics

3. AlGaN/AlN/GaN/SiC HEMT structure with high mobility GaN thin layer as channel grown by MOCVD

4. High voltage (450 V) GaN Schottky rectifiers

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3. A facile route to a high-quality graphene/MoS2 vertical field-effect transistor with gate-modulated photocurrent response;Journal of Materials Chemistry C;2017

4. Theoretical and computational analysis of the quantum radar cross section for simple geometrical targets;Quantum Information Processing;2016-12-23

5. Impact of dual field plates on drain current degradation in InAlN/AlN/GaN HEMTs;Semiconductor Science and Technology;2016-10-28

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