Characterization and optimization of ion implantation for high spatial resolution quantum well intermixing in GaAs/AlGaAs superlattices
Author:
Publisher
EDP Sciences
Subject
Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials
Link
http://epjap.epj.org/10.1051/epjap/2014140020/pdf
Reference18 articles.
1. Quantum well intermixing
2. Focused ion-beam implantation induced thermal quantum-well intermixing for monolithic optoelectronic device integration
3. Stripe‐geometry quantum well heterostructure AlxGa1−xAs‐GaAs lasers defined by defect diffusion
4. Selective quantum-well intermixing in GaAs-AlGaAs structures using impurity-free vacancy diffusion
5. A universal damage induced technique for quantum well intermixing
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1. 不同Al组分的扩散阻挡层对无杂质空位诱导量子阱混杂的影响;Chinese Journal of Lasers;2021
2. Monolithic Fabrication of InGaAs/GaAs/AlGaAs Multiple Wavelength Quantum Well Laser Diodes via Impurity-Free Vacancy Disordering Quantum Well Intermixing;IEEE Journal of the Electron Devices Society;2017-03
3. Ion-beam induced effects in multi-layered semiconductor systems;physica status solidi (b);2016-07-15
4. Propagation Loss Analysis of Ion Implantation Induced Quantum Well Intermixed GaAs/AlGaAs Waveguides;CHINESE J PHYS;2015
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