Physic-topological (electrical) model of a junction field effect transistor, taking into account the degradation of operational characteristics under the influence of penetrating radiation

Author:

Lovshenko Ivan,Khanko Veranika,Stempitsky Viktor

Abstract

The results of applying the compact model of junction field effect transistors developed and integrated into the Cadence software product for control to evaluate the hardness of a two-stage differential amplifier circuit under the combined or separate exposure to fluences of electrons, protons and neutrons are presented.

Publisher

EDP Sciences

Subject

General Medicine

Reference18 articles.

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2. Baumann R., Kruckmeyer K., Radiation handbook for electronics: A compendium of radiation effects topics for space, industrial and terrestrial applications (Texas Instruments, Dallas, 2019)

3. Dvornikov O.V., Tchekhovski V.A., Diatlov V.L., Bogatyrev Yu.V., Lastovski S.B., Forecasting of bipolar integrated circuits hardness for various kinds of penetrating radiations, Int. Crimean Conference "Microwave & Telecommunication Technology", pp. 925-926 (2013)

4. Shvarts N.Z., Lineynye tranzistornye usiliteli SVCh (Sov. radio, Moscow, 1980)

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1. Circuitry Approaches for Reducing of the Zero Level in Three-Stage CJFET Operational Amplifier;2022 IEEE International Conference on Design & Test of Integrated Micro & Nano-Systems (DTS);2022-06-06

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