Isothermal measurement of current-voltage characteristics of Gunn diodes with reflection of their discontinuities and hysteresis

Author:

Semyonov Edward,Malakhovskij Oleg

Abstract

Requirements to the measuring setup are formulated, which make it possible obtaining isothermal current-voltage (I-V) characteristics of the Gunn diode with reflection of their discontinuities, region of negative differential resistance, and hysteresis. The influence of the inductance of the test pulses, source on the occurrence of self-excitation in the connecting transmission line is investigated. The maximum permissible values of the inductance of the test signal source are indicated. Operation of the measuring circuit without self-excitation was experimentally achieved in most of the region with negative differential resistance. The isothermal I-V characteristics of the Gunn diode were measured with a controlled systematic error due to the comparing the measurement result with the developed model of the I-V characteristic.

Publisher

EDP Sciences

Subject

General Medicine

Reference3 articles.

1. Murayama K., Ohmi T., Static Negative Resistance in Highly Doped Gunn Diodes and Application to Switching and Amplification, Japanese Journal of Applied Physics, no. 12, pp. 1931–1940 (1973)

2. Förster A., Stock J., Montanari S., Lepsa M.I., Lüth H., Fabrication and characterisation of GaAs Gunn diode chips for applications at 77 GHz in automotive industry, Sensors, no. 6, pp. 350–360 (2006)

3. Semyonov E.V., Malakhovskij O.Yu., Influence of the Output Resistance of Measurement System to I-V Characteristics of Gunn Diodes, in Proc of 14th Int. conf. “Actual Problems of Electronic Instrument Engineering”, Novosibirsk, Russia, vol. 1, part 1, pp. 70–72 (October 2018)

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