Static Negative Resistance in Highly Doped Gunn Diodes and Application to Switching and Amplification
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/12/i=12/a=1931/pdf
Cited by 16 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Light-Triggerable and Gate-Tunable Negative Differential Resistance in Small Molecules Heterojunction;Nano Letters;2024-01-31
2. Short-Pulse Properties of the Gunn Diode;IEEE Transactions on Electron Devices;2020-05
3. Isothermal measurement of current-voltage characteristics of Gunn diodes with reflection of their discontinuities and hysteresis;ITM Web of Conferences;2019
4. Measurement of the mobility and concentration of charge carriers in a Gunn gallium-arsenide diode using a near-field microwave microscope;Semiconductors;2013-12
5. Investigation of the charge carrier concentration and electric field distribution in gallium arsenide Gunn diode;Radioelectronics and Communications Systems;2013-11
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