Some remarks on the review « Quantitative evaluation of the EBIC contrast of dislocations » by C. Donolato-Reference-Cited by-同舟云学术

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Some remarks on the review « Quantitative evaluation of the EBIC contrast of dislocations » by C. Donolato

Published:1984 Issue:3 Volume:45 Page:133-136
ISSN:0302-072X
Container-title:Journal de Physique Lettres
language:
Short-container-title:J. Phyique Lett.

Author:

Pasemann L.

Publisher

EDP Sciences

Subject

General Engineering

Link

http://jphyslet.journaldephysique.org/10.1051/jphyslet:01984004503013300/pdf

Reference6 articles.

1. Interpretation of the EBIC contrast of dislocations in silicon

2. A contribution to the theory of the EBIC contrast of lattice defects in semiconductors

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Cathodoluminescence evidence of the relative position of As(g) and Ga(g) dislocation-related energy bands in gallium arsenide;Physica Status Solidi (a);1993-08-16

2. Analysis of the recombination velocity and of the electron beam induced current and cathodoluminescence contrasts at a dislocation;Journal of Applied Physics;1992-05-15

3. A theoretical study of the charge collection contrast of localized semiconductor defects with arbitrary recombination activity;Semiconductor Science and Technology;1992-01-01

4. EBIC contrast theory of dislocations : intrinsic recombination properties;Revue de Physique Appliquée;1990

5. Mass spectra of AuGe alloy liquid metal ion sources;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1989-02

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