A contribution to the theory of the EBIC contrast of lattice defects in semiconductors
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference15 articles.
1. Electrical Activity of Epitaxial Stacking Faults
2. The electrical recombination efficiency of individual edge dislocations and stacking fault defects in n-type silicon
3. Combined scanning (EBIC) and transmission electron microscopic investigations of dislocations in semiconductors
4. Observation of dislocations and microplasma sites in semiconductors by direct correlations of STEBIC, STEM and ELS
5. Scanning Electron Microscopic Observation of Oxidation-Induced Stacking Faults in Silicon
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1. Nanoscale Analyses Applied to Nanowire Devices;Semiconductors and Semimetals;2018
2. High accelerating voltage electron beam induced current (EBIC) of thick and thin solar silicon specimens;Solar Energy Materials and Solar Cells;1993-09
3. Studies on carrier recombination at dislocations in compound semiconductors by combined SEM-CL/EBIC measurements;Physica Status Solidi (a);1993-08-16
4. Cathodoluminescence evidence of the relative position of As(g) and Ga(g) dislocation-related energy bands in gallium arsenide;Physica Status Solidi (a);1993-08-16
5. A theoretical study of the charge collection contrast of localized semiconductor defects with arbitrary recombination activity;Semiconductor Science and Technology;1992-01-01
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