Exciton et polariton dans les semiconducteurs cubiques : étude de la réflectivité-Reference-Cited by-同舟云学术

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Exciton et polariton dans les semiconducteurs cubiques : étude de la réflectivité

Published:1987 Issue:3 Volume:12 Page:109-182
ISSN:0003-4169
Container-title:Annales de Physique
language:
Short-container-title:Ann. Phys. Fr.

Author:

Chen Y.,Gil B.,Mathieu H.

Publisher

EDP Sciences

Subject

General Physics and Astronomy

Link

http://www.annphys.org/10.1051/anphys:01987001203010900/pdf

Reference150 articles.

1. Theory of the Contribution of Excitons to the Complex Dielectric Constant of Crystals

2. Sturge, M., Rashba, E. (Eds) Excitons (North-Holland, Amsterdam, 1982).

3. Cardona, M., Guntherodt, G. (Eds) Light scattering in solids : III (Springer, Berlin, 1982).

4. Bassani, F., Andreani, L.C., « Excited states spectroscopy », in Fermi Vac. school, 1985.

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1. Time-resolved photoluminescence study of excitons in hexagonal GaN layers grown on sapphire;Physical Review B;1998-03-15

2. Determination of the spin-exchange interaction constant in wurtzite GaN;Physical Review B;1998-03-15

3. Piezo-optics of InP in the visible-ultraviolet range;Physical Review B;1998-02-15

4. The exciton-polariton effect on the photoluminescence of GaN on sapphire;Solid State Communications;1997-11

5. Optical properties of GaN epilayers on sapphire;Journal of Applied Physics;1996-11

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