Time-resolved photoluminescence study of excitons in hexagonal GaN layers grown on sapphire-Reference-Cited by-同舟云学术

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Time-resolved photoluminescence study of excitons in hexagonal GaN layers grown on sapphire

Published:1998-03-15 Issue:12 Volume:57 Page:7066-7070
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Pau S.,Liu Z. X.,Kuhl J.,Ringling J.,Grahn H. T.,Khan M. A.,Sun C. J.,Ambacher O.,Stutzmann M.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.57.7066/fulltext

Reference25 articles.

1. Chapter 11 Optical Properties of GaN

2. Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies

3. Excitonic recombination in GaN grown by molecular beam epitaxy

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