n ITO/p InP : a photo and electroluminescent diode
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Publisher
EDP Sciences
Link
http://rphysap.journaldephysique.org/10.1051/rphysap:01982001703012500/pdf
Reference22 articles.
1. InP Schottky-gate field-effect transistors
2. Bias dependence of GaAs and InP MESFET parameters
3. Low leakage nearly ideal Schottky barriers to n-InP
4. InP metal‐insulated‐semiconductor Schottky contacts using surface oxide layers prepared with bromine water
5. Metal‐insulator semiconductor Schottky‐barrier solar cells fabricated on InP
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1. n‐SnO x as a Transparent Electrode and Heterojunction for p‐InP Nanowire Light Emitting Diodes;Advanced Optical Materials;2022-04-07
2. Non-epitaxial carrier selective contacts for III-V solar cells: A review;Applied Materials Today;2020-03
3. Indium phosphide based solar cell using ultra-thin ZnO as an electron selective layer;Journal of Physics D: Applied Physics;2018-08-21
4. Schottky-Barrier-Type Optoelectronic Structures;Metal-Semiconductor Schottky Barrier Junctions and Their Applications;1984
5. Summary Abstract: p‐InP surface modification due to indium tin oxide deposition;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1983-04
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