Minority carriers lifetime degradation during ion implanted silicon solar cell processing
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Publisher
EDP Sciences
Link
http://rphysap.journaldephysique.org/10.1051/rphysap:019780013012080900/pdf
Reference13 articles.
1. Silicon solar cells by high-speed low-temperature processing
2. A Method for the Measurement of Short Minority Carrier Diffusion Lengths in Semiconductors
3. Surface Photovoltage Method Extended to Silicon Solar Cell Junction
4. Carrier mobilities in silicon empirically related to doping and field
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2. The measurement of the diffusion length and the recombination velocity at the grain boundary in polycrystalline solar cells by the SEM-EBIC technique;Solid-State Electronics;1985-07
3. Beam Processing Techniques Applied to Crystal Silicon Substrates;Large Scale Integrated Circuits Technology: State of the Art and Prospects;1982
4. Determination of minority‐carrier lifetime in silicon solar cells from laser‐transient photovoltaic effect;Journal of Applied Physics;1981-12
5. The Annealing of Ion-Implanted Silicon Solar Cells;Photovoltaic Solar Energy Conference;1981
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