Impurity-induced microstructure of grain boundaries in cast silicon. Incidence on electrical properties-Reference-Cited by-同舟云学术

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Impurity-induced microstructure of grain boundaries in cast silicon. Incidence on electrical properties

Published:1987 Issue:7 Volume:22 Page:623-629
ISSN:0035-1687
Container-title:Revue de Physique Appliquée
language:
Short-container-title:Rev. Phys. Appl. (Paris)

Author:

Laval J.Y.,Maurice J.L.,Cabanel C.

Publisher

EDP Sciences

Link

http://rphysap.journaldephysique.org/10.1051/rphysap:01987002207062300/pdf

Reference20 articles.

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Metallic and non-metallic longitudinal conductance of grain boundaries in bicrystalline and polycrystalline germanium doped with mercury and antimony;Journal of Physics: Condensed Matter;2002-11-22

2. Charge Relaxation at Oxygen-Enriched Silicon Grain Boundaries;Solid State Phenomena;2001-11

3. Localization of the electrical activity of structural defects in polycrystalline silicon;Journal of Applied Physics;1990-02

4. STRUCTURE AND LOCAL ELECTRICAL PROPERTIES OF GRAIN BOUNDARIES IN POLYCRYSTALLINE SEMICONDUCTORS;Le Journal de Physique Colloques;1988-10

5. On the origin of the electrical activity in silicon grain boundaries;Revue de Physique Appliquée;1987

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