On the origin of the electrical activity in silicon grain boundaries-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

On the origin of the electrical activity in silicon grain boundaries

Published:1987 Issue:7 Volume:22 Page:613-621
ISSN:0035-1687
Container-title:Revue de Physique Appliquée
language:
Short-container-title:Rev. Phys. Appl. (Paris)

Author:

Maurice J.-L.

Publisher

EDP Sciences

Link

http://rphysap.journaldephysique.org/10.1051/rphysap:01987002207061300/pdf

Reference98 articles.

Cited by 42 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electrical activity of grain boundaries in polycrystalline silicon - influences of grain boundary structure, chemistry and temperature;INT J MATER RES;2022

2. Impact of Al doping on a hydrothermally synthesized β-Ga2O3 nanostructure for photocatalysis applications;RSC Advances;2021

3. Impact of the dangling bond defects and grain boundaries on trapping recombination process in polycrystalline 3C SiC;Journal of Alloys and Compounds;2020-05

4. Interfacial atomic structure and electrical activity of nano-facetted CSL grain boundaries in high-performance multi-crystalline silicon;Journal of Applied Physics;2020-03-31

5. A deep level transient spectroscopy study on the interface states across grain boundaries in multicrystalline silicon;physica status solidi (RRL) - Rapid Research Letters;2011-07-04

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP