Passivation des semiconducteurs III-V
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Publisher
EDP Sciences
Link
http://rphysap.journaldephysique.org/10.1051/rphysap:01990002509089500/pdf
Reference75 articles.
1. Evidence for low surface recombination velocity onn‐type InP
2. Ambient gas influence on photoluminescence intensity from InP and GaAs cleaved surfaces
3. Insitumeasurements of photoluminescence intensities from cleaved (110) surfaces ofn‐type InP in a vacuum and gas ambients
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