Effect of the Surface Passivation on the I‒V Characteristics of the XBn-InGaAs Focal Plane Arrays-Reference-Cited by-同舟云学术

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Effect of the Surface Passivation on the I‒V Characteristics of the XBn-InGaAs Focal Plane Arrays

Published:2023-03 Issue:3 Volume:68 Page:366-370
ISSN:1064-2269
Container-title:Journal of Communications Technology and Electronics
language:en
Short-container-title:J. Commun. Technol. Electron.

Author:

Trukhachev A. V.,Trukhacheva N. S.,Sednev M. V.,Boltar K. O.

Publisher

Pleiades Publishing Ltd

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Radiation,Electronic, Optical and Magnetic Materials

Link

https://link.springer.com/content/pdf/10.1134/S1064226923030166.pdf

Reference19 articles.

1. A. I. Dirochka and L. N. Kurbatov, Photoelectronics. Basic Lectures on Electronics, Vol. 2: Solid-State Electronics (Tekhnosfera, Moscow, 2009) [in Russian].

2. V. P. Ponomarenko, Quantum Photosensorics (AO “NPO “Orion”, 2018) [in Russian].

3. I. D. Burlakov, L. Ya. Grinchenko, A. I. Dirochka, and N. B. Zaletaev, Usp. Prikl. Fiz. 2 (2), 131 (2014).

4. J. K. Kim, M. J. Cich, G. A. Keeler, S. D. Hawkins, and T. R. Fortune, Appl. Phys. Lett. 95, 031112 (2009).

5. M. V. Sednev, K. O. Boltar’, N. A. Irodov, and S. S. Demidov, Prikl. Fiz., No. 3 (2015).

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