Author:
Troyan Pavel,Zhidik Yury,Zhidik Ekaterina
Abstract
The paper represents research of thermal stability of optical and electro-physical parameters of ITO films deposited using various techniques. Variation of optical and electro-physical parameters was recorded using spectroscopy, and Hall’s and four-probe measurements. The best thermal stability was demonstrated by ITO films deposited by metal target sputtering In(90%)/Sn(10%) in mixture of gases O2 (25%) + Ar (75%) with further annealing in air atmosphere. This enables to apply this technique for production of thin film transparent resistive elements capable to heat the translucent structures up to 100°C without deterioration of their parameters.
Reference10 articles.
1. Review of the market for indium-tin oxides and materials for their production in the worl, available at: http://www.infomine.ru/order-demo/458 (in Russian)
2. AlGaInN-based light emitting diodes with a transparent p-contact based on thin ITO films
3. Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances
4. Transparent and conducting ITO films: new developments and applications
5. A.I. Cheban, The first European “Plane of Dreams” arrived in Ukraine, available at: http://alexcheban.livejournal.com/102426.html (in Russian)
Cited by
4 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献