Investigation of degradation mechanisms in small scaled amorphous-indium-gallium-zinc-oxide thin-film-transistors
Author:
Publisher
The Electrochemical Society
Subject
Electronic, Optical and Magnetic Materials
Link
https://iopscience.iop.org/article/10.1149/2162-8777/ac2328/pdf
Reference32 articles.
1. The effect of asymmetrical electrode form after negative bias illuminated stress in amorphous IGZO thin film transistors
2. Integrated Active-Matrix Capacitive Sensor Using a-IGZO TFTs for AMOLED
3. Interplay between mass-impurity and vacancy phonon scattering effects on the thermal conductivity of doped cadmium oxide
4. Mechanism of a-IGZO TFT device deterioration—illumination light wavelength and substrate temperature effects
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1. Gate bias stress reliability of a-InGaZnO TFTs under various channel dimension;Microelectronics Reliability;2024-02
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