Mechanism of a-IGZO TFT device deterioration—illumination light wavelength and substrate temperature effects-Reference-Cited by-同舟云学术

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Mechanism of a-IGZO TFT device deterioration—illumination light wavelength and substrate temperature effects

Published:2017-09-27 Issue:42 Volume:50 Page:42LT02
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Chen Te-Chih,Kuo Yue,Chang Ting-Chang,Chen Min-Chen,Chen Hua-Mao

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://iopscience.iop.org/article/10.1088/1361-6463/aa864c/pdf

Reference21 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

2. Fully Transparent ZnO Thin-Film Transistor Produced at Room Temperature

3. 3.1: Distinguished Paper: 12.1-Inch WXGA AMOLED Display Driven by Indium-Gallium-Zinc Oxide TFTs Array

4. Circuits using uniform TFTs based on amorphous In-Ga-Zn-O

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1. Viable Approach of Tuning Oxide Semiconductor Thin Films in Solution‐Processed Heterojunction Thin Films Transistors for Both Higher Performances and Stability;Advanced Electronic Materials;2024-08-27

2. Self-Powered InGaZnO Ozone Gas Sensors Based on a Metal–Semiconductor–Metal Structure with Asymmetric Interdigitated Electrodes;ACS Applied Electronic Materials;2024-03-12

3. Investigation of Donor-like State Distributions in Solution-Processed IZO Thin-Film Transistor through Photocurrent Analysis;Nanomaterials;2023-11-21

4. Serially connected tantalum and amorphous indium tin oxide for sensing the temperature increase in IGZO thin-film transistor backplanes;Journal of Information Display;2023-03-08

5. Impact of Variant Gate Insulator Fabrication Process on Reliability of Dual-Gate InGaZnO Thin-Film Transistors;IEEE Transactions on Electron Devices;2023-03

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