Affiliation:
1. Indian Institute of Information Technology
Abstract
Comparison of C-V characteristics and interface trap distribution for 6H-SiC MOS capacitor with AlN and HfO2 as high-k dielectric are presented. It is observed that the transition from accumulation to inversion requires a small change in gate voltage for HfO2 compared to AlN. Furthermore, larger shift in flat band voltage with respect to frequency is observed in case of AlN. A larger change in capacitance with respect to voltage and flat band voltage shift with respect to frequency for AlN indicated a poor choice for MOS capacitor compared to HfO2.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
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