Selective Etch for Micromachining Process in Manufacturing Hybrid Microdevices composed of Ni-Mn-Ga and Silicon Layers

Abstract

The goal of this study is to make selective etch possible for the next generation of MEMS(microelectromechanical systems) devices that are composed Ni-Mn-Ga and silicon layers. Due tothe large magnetic-field-induced strains of Ni-Mn-Ga, sensing and actuating components can be fab-ricated in the Ni-Mn-Ga layers. Other functional components can be manufactured in the silicon layer.Single crystalline Ni-Mn-Ga alloys that are grown by using the Bridgman vertical growth techniquehave so far obtained the largest magnetic field-induced strain (MFIS), a magnetic shape memory(MSM) effect. Similar to silicon wafers, Ni-Mn-Ga wafers are also sliced from crystal-oriented singlecrystalline ingots. To fabricate hybrid MEMS devices such as micromanipulators and robots, lab-on-chip containing micropump manifolds and valves, or vibration energy harvesters, the fabricationprocesses used for MEMS devices will be also used to fabricate components in the Ni-Mn-Ga layer ofthe hybrid MEMS devices. One of the most important processes for MEMS fabrication is the structur-ing of materials by chemical etching. The main goal of this study is to obtain evidence that the etchantetches silicon but not Ni-Mn-Ga and to identify an etchant that etches Ni-Mn-Ga but not silicon. Thepresent paper reports on a novel experiment in dissolving Ni-Mn-Ga alloys. An etchant compositionof 69% HNO3, 98% H2SO4, and CuSO4•5H2O is proposed for dissolving Ni-Mn-Ga alloys and thevariation in the dissolution rate by adjusting the concentrations of HNO3 and ultrapure water (UPW)is demonstrated. This etchant was demonstrated to etch Ni-Mn-Ga but not silicon. The HF+HNO3acidic solution commonly used for etching silicon does not dissolve Ni-Mn-Ga alloys.