Affiliation:
1. Université de Reims Champagne-Ardenne
2. University of Technology of Troyes
Abstract
A non-destructive technique for the characterization of the doped regions inside wide bandgap (WBG) semiconductor structures of power devices is presented. It consists in local measurements of the surface potential by Kelvin Probe Force Microscopy (KPFM) coupled to micro-Raman spectroscopy. The combined experiments allow to visualize the space charge extent of the doped region using the near-field mapping and to estimate its dopant concentration using the Raman spectroscopy. The technique has been successfully applied for the characterization of a WBG SiC (silicon carbide) device.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Cited by
1 articles.
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