Methods of Measurement of Die Temperature of Semiconductor Elements: A Review-Reference-Cited by-同舟云学术

Methods of Measurement of Die Temperature of Semiconductor Elements: A Review

Published:2023-03-08 Issue:6 Volume:16 Page:2559
ISSN:1996-1073
Container-title:Energies
language:en
Short-container-title:Energies

Author:

Dziarski Krzysztof¹^ORCID,Hulewicz Arkadiusz²^ORCID,Kuwałek Piotr²^ORCID,Wiczyński Grzegorz²^ORCID

Affiliation:

1. Institute of Electric Power Engineering, Poznan University of Technology, Piotrowo Street 3A, 60-965 Poznan, Poland

2. Institute of Electrical Engineering and Electronics, Poznan University of Technology, Piotrowo Street 3A, 60-965 Poznan, Poland

Abstract

Monitoring the temperature of a semiconductor component allows for the prediction of potential failures, optimization of the selected cooling system, and extension of the useful life of the semiconductor component. There are many methods of measuring the crystal temperature of the semiconductor element referred to as a die. The resolution and accuracy of the measurements depend on the chosen method. This paper describes known methods for measuring and imaging the temperature distribution on the die surface of a semiconductor device. Relationships are also described that allow one to determine the die temperature on the basis of the case temperature. Current trends and directions of development for die temperature measurement methods are indicated.

Funder

Faculty of Control, Robotics and Electrical Engineering of the Poznan University of Technology

Publisher

MDPI AG

Subject

Energy (miscellaneous),Energy Engineering and Power Technology,Renewable Energy, Sustainability and the Environment,Electrical and Electronic Engineering,Control and Optimization,Engineering (miscellaneous),Building and Construction

Link

https://www.mdpi.com/1996-1073/16/6/2559/pdf

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