Influence of Y<sup>3+</sup> Doping on Dielectric and Optical Properties of Ce<sub>2</sub>S<sub>3</sub> Spherical Shaped Nanostructures Synthesized by Chemical Precipitation Method

Author:

Adimule Vinayak1,Yallur Basappa C.2,Sankannavar Ravi3ORCID

Affiliation:

1. Angadi Institute of Technology and Management (AITM)

2. M.S. Ramaiah Institute of Technology (Affiliated to VTU)

3. M.S. Ramaiah Institute of Technology

Abstract

In the present investigation, Y3+ doped (5 wt. %, 10 wt. %, and 12 wt. %) cerium sesquisulfides (Ce2S3) nanoparticles (NPS) were synthesized by a simple chemical precipitation method. Thin films of Y3+:Ce2S3 NPs achieved on ITO (indium tin oxide) substrate. XRD (X-ray diffraction) patterns were used to estimate the size of the NPS, morphology index, texture coefficient, and lattice constants. The crystallite size was found to be in the range of 18-34 nm. UV-visible spectral studies were carried out in order to understand optical absorptivity, and optical band (Eg) of the as-synthesized nanostructures (NS). It has been observed that the red shift in the optical absorptivity and Eg value varies between 3.45 eV to 2.59 eV. Morphology and the presence of Y+3 were investigated by scanning electron microscope (SEM) and energy dispersive X-ray studies (EDX). However, agglomerated spherical-shaped NPs and homogeneous dispersion of Y3+ were observed in EDX analysis. Chemical constituents and nature of the doped NS were examined by X-ray photoelectron spectroscopy (XPS), and binding energies matched with Y 3d3/2, Y 3d5/2, Ce 3d3/2, Ce 3d5/2, O1s, C1s peaks. Y3+: Ce2S3 (12 wt. %) NS subjected for dielectric property studies in the frequency range of 10 Hz-10 MHz at room temperature (RT). High dielectric permittivity (Ɛ), and very low dielectric loss (tan δ) were observed at low frequency for 12 wt. % Y3+:Ce2S3 NS as compared with other doped NS. The as-synthesized NS can be used for high dielectric permittivity, low dielectric loss, and capacitor-related applications.

Publisher

Trans Tech Publications, Ltd.

Subject

General Chemical Engineering

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