A Deeper Look into the Effects of Extended Defects in SiC Epitaxial Layers on Device Performance and Reliability
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Published:2022-05-31
Issue:
Volume:1062
Page:406-410
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ISSN:1662-9752
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Container-title:Materials Science Forum
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language:
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Short-container-title:MSF
Author:
Das Hrishikesh1ORCID, Sunkari Swapna1, Justice Joshua1, Hamann Danielle1
Abstract
The detection and classification of SiC Epitaxial extended defects was refined to separate out defective areas that influence device characteristics. Die level defect localization along with defect area calculations were performed on millions of die across product groups. A clear impact of non-killer defects was observed, especially with increasing density and defective area in the die. Specifically, all types of stacking faults caused higher leakage, lower blocking voltage, and increases in ON resistance and threshold leakage. Furthermore, MOSFET devices were affected to a much larger extent than diode devices. Testing die with higher numbers of defects provides insight on device reliability. Analyzing devices with specific counts of BPDs let us quantify the amount of bipolar degradation caused drift by product/voltage classes.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference7 articles.
1. H. Das, S. Sunkari, J. Justice, H. Pham and K.S. Park, Mater. Sci. Forum, 963, pp.284-287, (2019). 2. E. Van Brunt, A. Burk, D. J. Lichtenwalner, R. Leonard, S. Sabri, A. Gajewski, A. Mackenzie, B. A. Hull, S. Allen, and J. W. Palmour. Mater. Sci. Forum, 924, pp.137-142, (2018). 3. H. Das, S. Sunkari, J. Justice, H. Pham, G. Park, and Y. Seo, Materials Science Forum, 1004, pp.458-463, (2020). 4. T. Neyer, M. Domeij, H. Das, and S. Sunkari, 2021 IEEE International Reliability Physics Symposium (IRPS), pp.1-6, (2021). 5. S. Kochoska, M. Domeij, S. Sunkari, J. Justice, H. Das, T. T. Pham, J. Franchi, S. Maslougkas, H. Lee, X. Q. Hu, and T. Neyer, To be presented the ECSCRM 2021 Conference, Tours, France.
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