Affiliation:
1. RENA Technologies GmbH
Abstract
In this paper we present a novel tool layout for wet chemical processing of porous silicon carbide layers. The novel tool concept includes single side processing without edge exclusion. There is no need to contact the backside of the wafer. We show SEM cross sections of the porous layer made by different currents densities. With increased current density the porosity increases. After optimization of the process conditions, we achieve a layer thickness non-uniformity of 10%.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science