Affiliation:
1. NOVASiC
2. Université Côte d'Azur
Abstract
The present experimental study demonstrates the feasibility of Vanadium doping of 3CSiC hetero-epitaxial material. Some of Vanadium incorporation trends as well as the influence of Vanadium doping on 3C-SiC resistivity are observed.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science