Effect of the Introduction of a Staircase Defect on the Behavior of the Induced Electronic State in a MQWs Structure

Abstract

This work investigates the behavior of the electronic states in ZnO/ Zn1-xMgxO MQWs induced by a staircase-like defect layer bounded by two substrates of the same type (ZnO). We use the interface response theory to calculate the different physical properties of the system. First, westudied a material staircase defect containing three material defects, such where the concentration depends on an increasing step noted P and a parameter X0 which does not exceed 0.35, so that the materials remain crystallized in the same structure. We found that the increase of these parameters induces an augmentation in the potential energy, leading to shifts of the electronic states to higher energies. In the second part, we studied the effect of introducing a geo-material defect with the step P=0.05 and X0=0 as optimal values, and the thickness of the staircase defect layer depends on an increment step noted S. We found that the variation of S influences the number of states that appear in the gap, which gives the possibility to improve the electron transport without using higher energy.Finally, we try to find several staircase defect configurations used in different structures. We found that inside the case of symmetric defect permutation, the position of the defect does not influence the behavior of the electronic states. Still, in the case of antisymmetric permutation, the position of thedefect has an influence on the behavior of the electronic states.