Electronic Localized States Behaviour in a GaAs/GaAlAs Multi-Quantum Wells with a Geo-Material and a Material Defects

Abstract

This paper represents a theoretical study of the transmission and the electronic band structure for a GaAs/GaAlAs Multi-quantum wells, containing two defect layers: a geo-material and a material defect layer. The variation of the different physical parameters ( i.e the transmission rate and the energy of the eigen states) as a function of the defect layers nature, is carefully investigated using the Green’s function method. Due to the presence of the defect layers, localized electronic states appeared and their properties have been studied. Our results show that both the position and the thickness of the defect layers can play an important role in the creation of well-defined localized electronic states inside the band gaps, in order to favor the transfer of electrons, without using a higher energy. Furthermore, we were able to identify the origin of each of the states appearing inside the band gaps, whether they are induced by the geo-material or by the material defect.