Development of 3-Channel Inspection Analysis Technique for Defects of SiC Epitaxial Wafers Using Optical Inspection, Photoluminescence and X-Ray Topography-Reference-Cited by-同舟云学术

Development of 3-Channel Inspection Analysis Technique for Defects of SiC Epitaxial Wafers Using Optical Inspection, Photoluminescence and X-Ray Topography

Published:2024-08-22 Issue: Volume:434 Page:143-147
ISSN:1662-9507
Container-title:Defect and Diffusion Forum
language:
Short-container-title:DDF

Author:

Senzaki Junji¹,Nishino Junichi¹,Osanai Tsutom¹

Affiliation:

1. National Institute of Science and Technology

Abstract

3-channel analysis technique consisting of optical inspection, photoluminescence and X-ray topography methods for defect inspection of SiC epitaxial wafers has been investigated. The effectiveness of SiC wafer inspection image correction to enable automatic defect analysis is verified. Next, it is shown that the 3-channel analysis technique improves SiC defect inspection accuracy compared to conventional 2-channel analysis one.

Publisher

Trans Tech Publications, Ltd.

Link

https://www.scientific.net/DDF.434.143.pdf

Reference10 articles.

1. I. Kamata, X. Zhang, H. Tsuchida, Photoluminescence of Frank-type defects on the basal plane in 4H-SiC epilayers, Appl.Phys. Lett. 97 (2010) 172107.

2. T. Yamashita, H. Matsuhata, Y. Miyasaka, M. Odawara, K. Momose, T. Sato, M. Kitabatake, Characterization of (4,4)- and (5,3)-type stacking faults in 4deg.-off 4H-SiC epitaxial wafers by synchrotron X-ray topography and by photo-luminescence spectroscopy, Mater. Sci. Forum, 740-742 (2013) 585-588.

3. Photoluminescence Imaging and Discrimination of Threading Dislocations in 4H-SiC Epilayers;Nagano;Materials Science Forum,2014

4. IEC standard, Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 1: Classification of defects, IEC 63068-1:2019 (2019).

5. IEC standard, Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 2: Test method for defects using optical inspection, IEC 63068-2:2019 (2019).