Structural, Microstructural and Dielectric Properties of BaTi<sub>0.905</sub>Sn<sub>0.095</sub>O<sub>3</sub> Ceramic
Author:
Ku Muhsen Ku Noor Dhaniah1, Osman Rozana Aina Maulat1, Idris Mohd Sobri2ORCID, Muhammad Nadzri Nur Izzati2, Ruiz León Domingo Arturo3
Affiliation:
1. Universiti Malaysia Perlis 2. Universiti Malaysia Perlis (UniMAP) 3. Universidad de Santiago de Chile
Abstract
The BaTi0.905Sn0.095O3 ceramic has been synthesized by using a solid-state method and sintered at 1450 °C in air for 3 hours. The doping effect of 9.5 mol% Sn into BaTiO3 ceramic towards its crystal structure, dielectric properties and microstructure were investigated. The X-ray diffraction (XRD) analysis shows that the sample exhibited tetragonal structure with space group p4mm. The dielectric constant, εr measurement revealed that the sample reached the maximum εr value about 4393 when measured at Tc around 45 °C with frequency 1 kHz. The dielectric loss value was considerably low about below than 0.3 for the temperature range from 30 °C to 150 °C measured at 1 kHz. The capacitance value range lies between 10-9 and 10-10 indicates the bulk effect has dominated the electrical properties of the sample. It shows a good correlation with the microstructure results where the grains were well developed and homogenously distributed.
Publisher
Trans Tech Publications Ltd
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